TY - GEN
T1 - Nanosoldering carbon nanotube junctions with metal via local chemical vapor deposition for improved device performance
AU - Do, Jae Won
AU - Estrada, David
AU - Xie, Xu
AU - Chang, Noel N.
AU - Girolami, Gregory S.
AU - Rogers, John A.
AU - Pop, Eric
AU - Lyding, Joseph W.
PY - 2012
Y1 - 2012
N2 - Carbon nanotube (CNT) network devices are useful in integrated circuits and display drivers, particularly in applications that make use of thin film transistors. However, in such devices, the performance is usually limited by high electrical and thermal resistances at the inter-tube junctions. The current research presents a novel method to improve such resistances using a localized chemical vapor deposition (CVD) process. As these junctions are the most-resistive regions, we are able to locally heat and selectively deposit metals at the junctions by passing currents through the CNT network in the presence of metal CVD precursors in a vacuum environment, thereby nanosoldering the inter-tube junctions. We show that the metals indeed start to form at the junctions, which directly indicates that the inter-tube junctions are indeed the spots of high thermal resistance. We also show that the effects of nanosoldering are dependent on the types of metals deposited, and furthermore, our nanosoldering technique can effectively improve the overall device performance by more than an order of magnitude
AB - Carbon nanotube (CNT) network devices are useful in integrated circuits and display drivers, particularly in applications that make use of thin film transistors. However, in such devices, the performance is usually limited by high electrical and thermal resistances at the inter-tube junctions. The current research presents a novel method to improve such resistances using a localized chemical vapor deposition (CVD) process. As these junctions are the most-resistive regions, we are able to locally heat and selectively deposit metals at the junctions by passing currents through the CNT network in the presence of metal CVD precursors in a vacuum environment, thereby nanosoldering the inter-tube junctions. We show that the metals indeed start to form at the junctions, which directly indicates that the inter-tube junctions are indeed the spots of high thermal resistance. We also show that the effects of nanosoldering are dependent on the types of metals deposited, and furthermore, our nanosoldering technique can effectively improve the overall device performance by more than an order of magnitude
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U2 - 10.1109/NANO.2012.6322102
DO - 10.1109/NANO.2012.6322102
M3 - Conference contribution
AN - SCOPUS:84869178306
SN - 9781467321983
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Y2 - 20 August 2012 through 23 August 2012
ER -