A simple and efficient method for generating light emitting three-dimensional (3D) nanoscale pattern in silicon is presented. The method is based on differential chemical etching on and in-between patterned metal features. Effective transfer of various two-dimensional nanoscale (10-100 nm) metal patterns on bulk silicon to 3D porous silicon network is demonstrated. The capability and limitations of this method are discussed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)