Abstract
A simple and efficient method for generating light emitting three-dimensional (3D) nanoscale pattern in silicon is presented. The method is based on differential chemical etching on and in-between patterned metal features. Effective transfer of various two-dimensional nanoscale (10-100 nm) metal patterns on bulk silicon to 3D porous silicon network is demonstrated. The capability and limitations of this method are discussed.
| Original language | English (US) |
|---|---|
| Article number | 191113 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 19 |
| DOIs | |
| State | Published - 2008 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)