Nanoscale studies of electric field effects on monolayer 1T′-WTe2

Yulia Maximenko, Yueqing Chang, Guannan Chen, Mark R. Hirsbrunner, Waclaw Swiech, Taylor L. Hughes, Lucas K. Wagner, Vidya Madhavan

Research output: Contribution to journalArticlepeer-review


Monolayer 1 T′-WTe2 is a quantum spin Hall insulator with a gapped 2D-bulk and gapless helical edge states persisting to temperatures ~100 K. Despite the far-ranging interest, the magnitude of the bulk gap, the effect of gating on the 2D-band structure, as well the role interactions are not established. In this work we use STM spectroscopy to measure the intrinsic bulk gap of monolayer 1 T′-WTe2 and show that gate induced electric fields cause large changes of the gap magnitude. Our first-principles DFT-derived tight-binding model reveal that a combination of spatial localization of the conduction and valance bands and Rashba-like spin-orbit coupling leads to a gating induced spin-splitting of the 2D-bulk bands in the tens of meV, thereby reducing the band gap. Our work explains the large sensitivity of the band structure to electric fields and suggests a new avenue for realizing proximity induced non-trivial superconductivity in monolayer 1 T′-WTe2.

Original languageEnglish (US)
Article number29
Journalnpj Quantum Materials
Issue number1
StatePublished - Dec 2022

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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