Nanoscale simulation of heat conduction in semiconductor devices

Sanjiv Sinha; P. K. Schelling; S. R. Phillpot; K. E. Goodson

Nanoscale simulation of heat conduction in semiconductor devices

Sanjiv Sinha, P. K. Schelling, S. R. Phillpot, K. E. Goodson

Research output: Contribution to conference › Paper › peer-review

Abstract

Localized heat generation, with dimensions of the order of 10 nm, takes place in the drain regions of current transistors, resulting in an increase in thermal resistance near such a hotspot. We present a model based on the phonon Boltzmann transport equation (BTE) that agrees well with data for hotspots in simple geometries. The model suggests that scattering rates of optical phonons are key to the conduction physics. We use molecular dynamics to obtain phonon relaxation rates and show their dependence on the energy density in the hotspot. This work improves the constitutive modeling of heat flow in nanoscale devices.

Original language	English (US)
Pages	734-735
Number of pages	2
State	Published - Sep 20 2004
Externally published	Yes
Event	ITherm 2004 - Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems - Las Vegas, NV, United States Duration: Jun 1 2004 → Jun 4 2004

Other

Other	ITherm 2004 - Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems
Country/Territory	United States
City	Las Vegas, NV
Period	6/1/04 → 6/4/04

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "Localized heat generation, with dimensions of the order of 10 nm, takes place in the drain regions of current transistors, resulting in an increase in thermal resistance near such a hotspot. We present a model based on the phonon Boltzmann transport equation (BTE) that agrees well with data for hotspots in simple geometries. The model suggests that scattering rates of optical phonons are key to the conduction physics. We use molecular dynamics to obtain phonon relaxation rates and show their dependence on the energy density in the hotspot. This work improves the constitutive modeling of heat flow in nanoscale devices.",

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AU - Sinha, Sanjiv

AU - Schelling, P. K.

AU - Phillpot, S. R.

AU - Goodson, K. E.

PY - 2004/9/20

Y1 - 2004/9/20

N2 - Localized heat generation, with dimensions of the order of 10 nm, takes place in the drain regions of current transistors, resulting in an increase in thermal resistance near such a hotspot. We present a model based on the phonon Boltzmann transport equation (BTE) that agrees well with data for hotspots in simple geometries. The model suggests that scattering rates of optical phonons are key to the conduction physics. We use molecular dynamics to obtain phonon relaxation rates and show their dependence on the energy density in the hotspot. This work improves the constitutive modeling of heat flow in nanoscale devices.

AB - Localized heat generation, with dimensions of the order of 10 nm, takes place in the drain regions of current transistors, resulting in an increase in thermal resistance near such a hotspot. We present a model based on the phonon Boltzmann transport equation (BTE) that agrees well with data for hotspots in simple geometries. The model suggests that scattering rates of optical phonons are key to the conduction physics. We use molecular dynamics to obtain phonon relaxation rates and show their dependence on the energy density in the hotspot. This work improves the constitutive modeling of heat flow in nanoscale devices.

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Y2 - 1 June 2004 through 4 June 2004

ER -

Nanoscale simulation of heat conduction in semiconductor devices

Abstract

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