Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope

J. W. Lyding, T. C. Shen, J. S. Hubacek, J. R. Tucker, G. C. Abeln

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Nanoscale patterning of the hydrogen terminated Si(100)-2×1 surface has been achieved with an ultrahigh vacuum scanning tunneling microscope. Patterning occurs when electrons field emitted from the probe locally desorb hydrogen, converting the surface into clean silicon. Linewidths of 1 nm on a 3 nm pitch are achieved by this technique. Local chemistry is also demonstrated by the selective oxidation of the patterned areas. During oxidation, the linewidth is preserved and the surrounding H-passivated regions remain unaffected, indicating the potential use of this technique in multistep lithography processes.

Original languageEnglish (US)
Pages (from-to)2010-2012
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - Dec 1 1994


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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