Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope

J. W. Lyding, T. C. Shen, J. S. Hubacek, J. R. Tucker, G. C. Abeln

Research output: Contribution to journalArticle

Abstract

Nanoscale patterning of the hydrogen terminated Si(100)-2×1 surface has been achieved with an ultrahigh vacuum scanning tunneling microscope. Patterning occurs when electrons field emitted from the probe locally desorb hydrogen, converting the surface into clean silicon. Linewidths of 1 nm on a 3 nm pitch are achieved by this technique. Local chemistry is also demonstrated by the selective oxidation of the patterned areas. During oxidation, the linewidth is preserved and the surrounding H-passivated regions remain unaffected, indicating the potential use of this technique in multistep lithography processes.

Original languageEnglish (US)
Pages (from-to)2010-2012
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number15
DOIs
StatePublished - Dec 1 1994

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ultrahigh vacuum
microscopes
oxidation
scanning
hydrogen
lithography
chemistry
probes
silicon
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope. / Lyding, J. W.; Shen, T. C.; Hubacek, J. S.; Tucker, J. R.; Abeln, G. C.

In: Applied Physics Letters, Vol. 64, No. 15, 01.12.1994, p. 2010-2012.

Research output: Contribution to journalArticle

Lyding, J. W. ; Shen, T. C. ; Hubacek, J. S. ; Tucker, J. R. ; Abeln, G. C. / Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope. In: Applied Physics Letters. 1994 ; Vol. 64, No. 15. pp. 2010-2012.
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