Nanoscale oxide patterns on Si(100) surfaces

T. C. Shen; C. Wang; J. W. Lyding; J. R. Tucker

doi:10.1063/1.113817

Nanoscale oxide patterns on Si(100) surfaces

T. C. Shen, C. Wang, J. W. Lyding, J. R. Tucker

Research output: Contribution to journal › Article › peer-review

Abstract

Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.

Original language	English (US)
Pages (from-to)	976
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113817
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.113817

Library availability

Discover UIUC Full Text

Cite this

@article{2e922dd3abc04abc94b2c34ed408438e,

title = "Nanoscale oxide patterns on Si(100) surfaces",

abstract = "Ultrathin oxide patterns of a linewidth of 50 {\AA} have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 {\AA}. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.",

author = "Shen, {T. C.} and C. Wang and Lyding, {J. W.} and Tucker, {J. R.}",

year = "1995",

doi = "10.1063/1.113817",

language = "English (US)",

pages = "976",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Nanoscale oxide patterns on Si(100) surfaces

AU - Shen, T. C.

AU - Wang, C.

AU - Lyding, J. W.

AU - Tucker, J. R.

PY - 1995

Y1 - 1995

N2 - Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.

AB - Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=36449004847&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449004847&partnerID=8YFLogxK

U2 - 10.1063/1.113817

DO - 10.1063/1.113817

M3 - Article

AN - SCOPUS:36449004847

SN - 0003-6951

SP - 976

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Nanoscale oxide patterns on Si(100) surfaces

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this