Nanoscale oxide patterns on Si(100) surfaces

T. C. Shen, C. Wang, J. W. Lyding, J. R. Tucker

Research output: Contribution to journalArticle

Abstract

Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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