Nanoscale oxide patterns on Si(100) surfaces

T. C. Shen, C. Wang, J. W. Lyding, J. R. Tucker

Research output: Contribution to journalArticle

Abstract

Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - Dec 1 1995

Fingerprint

ultrahigh vacuum
oxides
oxidation
scanning
hydrogen
passivity
masks
desorption
microscopes
defects
silicon
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nanoscale oxide patterns on Si(100) surfaces. / Shen, T. C.; Wang, C.; Lyding, J. W.; Tucker, J. R.

In: Applied Physics Letters, 01.12.1995.

Research output: Contribution to journalArticle

@article{2e922dd3abc04abc94b2c34ed408438e,
title = "Nanoscale oxide patterns on Si(100) surfaces",
abstract = "Ultrathin oxide patterns of a linewidth of 50 {\AA} have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 {\AA}. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.",
author = "Shen, {T. C.} and C. Wang and Lyding, {J. W.} and Tucker, {J. R.}",
year = "1995",
month = "12",
day = "1",
doi = "10.1063/1.113817",
language = "English (US)",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Nanoscale oxide patterns on Si(100) surfaces

AU - Shen, T. C.

AU - Wang, C.

AU - Lyding, J. W.

AU - Tucker, J. R.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.

AB - Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=36449004847&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449004847&partnerID=8YFLogxK

U2 - 10.1063/1.113817

DO - 10.1063/1.113817

M3 - Article

AN - SCOPUS:36449004847

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -