Nanoscale electronic devices based on transition metal dichalcogenides

Wenjuan Zhu, Tony Low, Han Wang, Peide Ye, Xiangfeng Duan

Research output: Contribution to journalReview article

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have very versatile chemical, electrical and optical properties. In particular, they exhibit rich and highly tunable electronic properties, with a bandgap that spans from semi-metallic up to 2 eV depending on the crystal phase, material composition, number of layers and even external stimulus. This paper provides an overview of the electronic devices and circuits based on 2D TMDs, such as Esaki diodes, resonant tunneling diodes (RTDs), logic and RF transistors, tunneling field-effect transistors (TFETs), static random access memories (SRAMs), dynamic RAM (DRAMs), flash memory, ferroelectric memories, resistitive memories and phase-change memories. We address the basic device principles, the advantages and limitations of these 2D electronic devices, and our perspectives on future developments.

Original languageEnglish (US)
Article number032004
Journal2D Materials
Volume6
Issue number3
DOIs
StatePublished - Jun 3 2019

Keywords

  • Bipolar transistor
  • ESAKI diodes
  • Electronic devices
  • Logic transistor
  • Memory
  • Resonant tunneling diode
  • Transition metal dichalcogenides

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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