TY - GEN
T1 - Nanoscale Devices Based on Two-dimensional Materials and Ferroelectric Materials
AU - Yao, Zihan
AU - Ryu, Hojoon
AU - Xu, Kai
AU - Liu, Jialun
AU - Cai, Yuhang
AU - Yan, Yueming
AU - Zhu, Wenjuan
N1 - Funding Information:
The authors would like to acknowledge the support from the National Science Foundation (NSF) under grants ECCS 16-11279 and ECCS 16-53241 CAR.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/5
Y1 - 2018/12/5
N2 - In this paper, we review our research on nanoscale electronic and optoelectronic devices based on two-dimensional (2D) materials and ferroelectric materials. Our study reveals that the current transport in graphene is highly influenced by the number of layers, local topography, and gate dielectrics on the graphene. High-performance radio-frequency (RF) devices and plasmonic photodetectors were fabricated based on graphene. We also synthesized monolayer molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ) using chemical vapor deposition. The domain size of monolayer WSe 2 exceeds 100 μm. We demonstrate that logic devices based on MoS 2 have the potential to suppress short-channel effects and have high critical breakdown electric field. The gap states of MoS 2 were characterized using ac conductance. We found that the true band mobility of MoS 2 is much higher than the measured effective mobility due to the large number of gap states. In addition, we systematically investigated ferroelectric aluminum (Al)-doped hafnium oxide (HfO 2 ) with various top electrodes, Hf to Al ratios, and annealing temperatures. High-quality ferroelectric Al-doped HfO 2 with high remanent polarization and long endurance have been demonstrated.
AB - In this paper, we review our research on nanoscale electronic and optoelectronic devices based on two-dimensional (2D) materials and ferroelectric materials. Our study reveals that the current transport in graphene is highly influenced by the number of layers, local topography, and gate dielectrics on the graphene. High-performance radio-frequency (RF) devices and plasmonic photodetectors were fabricated based on graphene. We also synthesized monolayer molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ) using chemical vapor deposition. The domain size of monolayer WSe 2 exceeds 100 μm. We demonstrate that logic devices based on MoS 2 have the potential to suppress short-channel effects and have high critical breakdown electric field. The gap states of MoS 2 were characterized using ac conductance. We found that the true band mobility of MoS 2 is much higher than the measured effective mobility due to the large number of gap states. In addition, we systematically investigated ferroelectric aluminum (Al)-doped hafnium oxide (HfO 2 ) with various top electrodes, Hf to Al ratios, and annealing temperatures. High-quality ferroelectric Al-doped HfO 2 with high remanent polarization and long endurance have been demonstrated.
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U2 - 10.1109/ICSICT.2018.8564988
DO - 10.1109/ICSICT.2018.8564988
M3 - Conference contribution
AN - SCOPUS:85060277875
T3 - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
BT - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
A2 - Tang, Ting-Ao
A2 - Ye, Fan
A2 - Jiang, Yu-Long
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Y2 - 31 October 2018 through 3 November 2018
ER -