Nanoscale Devices Based on Two-dimensional Materials and Ferroelectric Materials

Zihan Yao, Hojoon Ryu, Kai Xu, Jialun Liu, Yuhang Cai, Yueming Yan, Wenjuan Zhu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we review our research on nanoscale electronic and optoelectronic devices based on two-dimensional (2D) materials and ferroelectric materials. Our study reveals that the current transport in graphene is highly influenced by the number of layers, local topography, and gate dielectrics on the graphene. High-performance radio-frequency (RF) devices and plasmonic photodetectors were fabricated based on graphene. We also synthesized monolayer molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ) using chemical vapor deposition. The domain size of monolayer WSe 2 exceeds 100 μm. We demonstrate that logic devices based on MoS 2 have the potential to suppress short-channel effects and have high critical breakdown electric field. The gap states of MoS 2 were characterized using ac conductance. We found that the true band mobility of MoS 2 is much higher than the measured effective mobility due to the large number of gap states. In addition, we systematically investigated ferroelectric aluminum (Al)-doped hafnium oxide (HfO 2 ) with various top electrodes, Hf to Al ratios, and annealing temperatures. High-quality ferroelectric Al-doped HfO 2 with high remanent polarization and long endurance have been demonstrated.

Original languageEnglish (US)
Title of host publication2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
EditorsTing-Ao Tang, Fan Ye, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538644409
DOIs
StatePublished - Dec 5 2018
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: Oct 31 2018Nov 3 2018

Publication series

Name2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Other

Other14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Country/TerritoryChina
CityQingdao
Period10/31/1811/3/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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