Nanometer structure fabrication using electron beam lithography

M. Isaacson; A. Muray; M. Scheinfein; I. Adesida; E. Kratschmer

doi:10.1016/0167-9317(84)90049-2

Nanometer structure fabrication using electron beam lithography

M. Isaacson, A. Muray, M. Scheinfein, I. Adesida, E. Kratschmer

Research output: Contribution to journal › Article › peer-review

Abstract

We review the program at Cornell University aimed at investigation of the size limits of patterning material using high energy electron beams. Structures at the 1-10 nanometer size scale have been fabricated using subnanometer diameter 100 keV electron beams. Using electron beam defined masks, we demonstrate ion beam replication of structures less than 30nm in width. Finally, in situ fabrication of metal structures with walls vertical to 0.8nm is shown using electron beam modification of AlF₃.

Original language	English (US)
Pages (from-to)	58-64
Number of pages	7
Journal	Microelectronic Engineering
Volume	2
Issue number	1-3
DOIs	https://doi.org/10.1016/0167-9317(84)90049-2
State	Published - Oct 1984
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(84)90049-2

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title = "Nanometer structure fabrication using electron beam lithography",

abstract = "We review the program at Cornell University aimed at investigation of the size limits of patterning material using high energy electron beams. Structures at the 1-10 nanometer size scale have been fabricated using subnanometer diameter 100 keV electron beams. Using electron beam defined masks, we demonstrate ion beam replication of structures less than 30nm in width. Finally, in situ fabrication of metal structures with walls vertical to 0.8nm is shown using electron beam modification of AlF3.",

author = "M. Isaacson and A. Muray and M. Scheinfein and I. Adesida and E. Kratschmer",

note = "Funding Information: This work was supportedb y the NSF through Grant No. ECS8200312t o NRRFSS. We thank J. Koumjian for technical assistance. Michael Isaacsonw ould like to extend his thanks to Profs. S. Nambaa nd K. Gamof or their invitation to participate in this conference and for insuring that the cherry blossomsw ere still in bloomd uring the week of the symposium.",

year = "1984",

month = oct,

doi = "10.1016/0167-9317(84)90049-2",

language = "English (US)",

volume = "2",

pages = "58--64",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-3",

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TY - JOUR

T1 - Nanometer structure fabrication using electron beam lithography

AU - Isaacson, M.

AU - Muray, A.

AU - Scheinfein, M.

AU - Adesida, I.

AU - Kratschmer, E.

N1 - Funding Information: This work was supportedb y the NSF through Grant No. ECS8200312t o NRRFSS. We thank J. Koumjian for technical assistance. Michael Isaacsonw ould like to extend his thanks to Profs. S. Nambaa nd K. Gamof or their invitation to participate in this conference and for insuring that the cherry blossomsw ere still in bloomd uring the week of the symposium.

PY - 1984/10

Y1 - 1984/10

N2 - We review the program at Cornell University aimed at investigation of the size limits of patterning material using high energy electron beams. Structures at the 1-10 nanometer size scale have been fabricated using subnanometer diameter 100 keV electron beams. Using electron beam defined masks, we demonstrate ion beam replication of structures less than 30nm in width. Finally, in situ fabrication of metal structures with walls vertical to 0.8nm is shown using electron beam modification of AlF3.

AB - We review the program at Cornell University aimed at investigation of the size limits of patterning material using high energy electron beams. Structures at the 1-10 nanometer size scale have been fabricated using subnanometer diameter 100 keV electron beams. Using electron beam defined masks, we demonstrate ion beam replication of structures less than 30nm in width. Finally, in situ fabrication of metal structures with walls vertical to 0.8nm is shown using electron beam modification of AlF3.

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JO - Microelectronic Engineering

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Nanometer structure fabrication using electron beam lithography

Abstract

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