The authors present a novel T -gate fabrication process which takes advantage of the unique high-resolution property of the low- k dielectric material, hydrogen silsesquioxane (HSQ), as a negative tone electron beam resist. By optimizing layout design and process parameters, the authors demonstrate ∼30 nm gap between two HSQ rectangular geometries, which is then used to define the T -gate footprint and support the T gate. An InGaAsInAlAsInP high electron mobility transistor with 80 nm gate length was fabricated using this HSQ-based resist technique. Excellent dc and rf performances are presented.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 2007|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering