Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

Niu Jin; Sookyung Choi; Liang Wang; Guang Chen; Donghyun Kim; Vipan Kumar; Ilesanmi Adesida

doi:10.1116/1.2798734

Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

Niu Jin, Sookyung Choi, Liang Wang, Guang Chen, Donghyun Kim, Vipan Kumar, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

The authors present a novel T -gate fabrication process which takes advantage of the unique high-resolution property of the low- k dielectric material, hydrogen silsesquioxane (HSQ), as a negative tone electron beam resist. By optimizing layout design and process parameters, the authors demonstrate ∼30 nm gap between two HSQ rectangular geometries, which is then used to define the T -gate footprint and support the T gate. An InGaAsInAlAsInP high electron mobility transistor with 80 nm gate length was fabricated using this HSQ-based resist technique. Excellent dc and rf performances are presented.

Original language	English (US)
Pages (from-to)	2081-2084
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	6
DOIs	https://doi.org/10.1116/1.2798734
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1116/1.2798734

Library availability

Discover UIUC Full Text

Cite this

@article{1d6164e1e4ae4052ac9e1e37416c8c9c,

title = "Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication",

abstract = "The authors present a novel T -gate fabrication process which takes advantage of the unique high-resolution property of the low- k dielectric material, hydrogen silsesquioxane (HSQ), as a negative tone electron beam resist. By optimizing layout design and process parameters, the authors demonstrate ∼30 nm gap between two HSQ rectangular geometries, which is then used to define the T -gate footprint and support the T gate. An InGaAsInAlAsInP high electron mobility transistor with 80 nm gate length was fabricated using this HSQ-based resist technique. Excellent dc and rf performances are presented.",

author = "Niu Jin and Sookyung Choi and Liang Wang and Guang Chen and Donghyun Kim and Vipan Kumar and Ilesanmi Adesida",

note = "Funding Information: This work was supported by NSF Grant Nos. ECS 04-03489 and NIRT DMR 0103248. The authors would like to thank K. C. Chow for assistance in e-beam lithography. ",

year = "2007",

doi = "10.1116/1.2798734",

language = "English (US)",

volume = "25",

pages = "2081--2084",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

AU - Jin, Niu

AU - Choi, Sookyung

AU - Wang, Liang

AU - Chen, Guang

AU - Kim, Donghyun

AU - Kumar, Vipan

AU - Adesida, Ilesanmi

N1 - Funding Information: This work was supported by NSF Grant Nos. ECS 04-03489 and NIRT DMR 0103248. The authors would like to thank K. C. Chow for assistance in e-beam lithography.

PY - 2007

Y1 - 2007

N2 - The authors present a novel T -gate fabrication process which takes advantage of the unique high-resolution property of the low- k dielectric material, hydrogen silsesquioxane (HSQ), as a negative tone electron beam resist. By optimizing layout design and process parameters, the authors demonstrate ∼30 nm gap between two HSQ rectangular geometries, which is then used to define the T -gate footprint and support the T gate. An InGaAsInAlAsInP high electron mobility transistor with 80 nm gate length was fabricated using this HSQ-based resist technique. Excellent dc and rf performances are presented.

AB - The authors present a novel T -gate fabrication process which takes advantage of the unique high-resolution property of the low- k dielectric material, hydrogen silsesquioxane (HSQ), as a negative tone electron beam resist. By optimizing layout design and process parameters, the authors demonstrate ∼30 nm gap between two HSQ rectangular geometries, which is then used to define the T -gate footprint and support the T gate. An InGaAsInAlAsInP high electron mobility transistor with 80 nm gate length was fabricated using this HSQ-based resist technique. Excellent dc and rf performances are presented.

UR - http://www.scopus.com/inward/record.url?scp=37149030028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37149030028&partnerID=8YFLogxK

U2 - 10.1116/1.2798734

DO - 10.1116/1.2798734

M3 - Article

AN - SCOPUS:37149030028

SN - 1071-1023

VL - 25

SP - 2081

EP - 2084

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this