Abstract
Nanometer-scale structures as small as 1 nm were fabricated on graphite surfaces using a scanning tunneling microscope in the presence of low-pressure (10-4 Torr) trimethylaluminum. The studies were performed under controlled conditions of gas purity and gas pressure, allowing systematic measurements. We studied the voltage threshold and other features of the fabrication process as a function of the tip-surface biasing voltage and the tunneling current. The studies lead us to believe that the structures were formed by bombardment of the graphite surface by ions produced by electron-assisted field ionization localized in the region of the tunneling gap.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2970-2974 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 69 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1991 |
ASJC Scopus subject areas
- General Physics and Astronomy
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