Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures

K. F. Eid, B. L. Sheu, O. Maksimov, M. B. Stone, P. Schiffer, N. Samarth

Research output: Contribution to journalArticlepeer-review


We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.

Original languageEnglish (US)
Article number152505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures'. Together they form a unique fingerprint.

Cite this