Abstract
Single-walled carbon nanotubes are promising to replace silicon as the channel material for high-performance electronics near the end of silicon scaling roadmap, with their superb electrical properties, intrinsic ultrathin body, and nearly transparent contact with certain metals. This chapter reviews recent advances in modeling and experimental works that reveal the properties and potential of ultrascaled nanotube transistors, separation and assembly techniques for forming nanotube arrays with high semiconducting nanotube purity and tight pitch separation, and engineering aspects of their implementation in integrated circuits and functional systems. A concluding discussion highlights most significant challenges from technology points of view and provides perspectives on the future of carbon nanotube-based nanoelectronics.
| Original language | English (US) |
|---|---|
| Title of host publication | Nanomaterials, Polymers and Devices |
| Subtitle of host publication | Materials Functionalization and Device Fabrication |
| Publisher | Wiley |
| Pages | 501-521 |
| Number of pages | 21 |
| ISBN (Electronic) | 9781118867204 |
| ISBN (Print) | 9780470048061 |
| DOIs | |
| State | Published - Jun 10 2015 |
| Externally published | Yes |
Keywords
- Carbon nanotube
- Electronics
- Field-effect transistors
ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)
- Engineering(all)
- Materials Science(all)
- Biochemistry, Genetics and Molecular Biology(all)