Nanocluster interfaces and epitaxy: Ag on Si surfaces

Jian Min Zuo, Boquan Li

Research output: Contribution to journalArticlepeer-review


We summarize our experimental investigation of the morphology and orientation of Ag nanoclusters on silicon surfaces formed by room-temperature (RT) deposition and subsequent annealing. Using Ag as a model system, we show that nanocluster interfaces and epitaxy depend critically on the cluster size and the substrate lattice. In case of Ag on hydrogen-terminated Si (111), the RT self-assembled clusters grow as mostly single-crystal crystallites with Ag (111)//Si (111), but the in-plane orientation has a dispersion of ∼ 9° centering at Si [110] direction. Upon annealing, the Ag clusters drastically rotated to the epitaxial configuration with the in-plane orientation aligned to the Ag [110]//Si [110] direction. The rotation and epitaxy of the Ag nanoclusters are explained based on a coincident site lattice model and interface energy minimization.

Original languageEnglish (US)
Pages (from-to)438-442
Number of pages5
JournalInternational Journal of Materials Research
Issue number5
StatePublished - Jan 1 2005
Externally publishedYes


  • Electron diffraction and imaging
  • Epitaxial growth
  • Interfaces
  • Nanocluster structure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Metals and Alloys
  • Materials Chemistry


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