Nano-scale type-II InP/GaAsSb DHBTs to reach THz cutoff frequencies

William Snodgrass, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm2 emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz cutoff frequencies.

Original languageEnglish (US)
Title of host publication2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
StatePublished - 2008
Event23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, United States
Duration: Apr 14 2008Apr 17 2008

Publication series

Name2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Other

Other23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
Country/TerritoryUnited States
CityChicago, IL
Period4/14/084/17/08

Keywords

  • Heterojunction bipolar transistor
  • Indium phosphide
  • Scaling
  • Terahertz

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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