@inproceedings{096093ae78d7487b9df1f1ee339146f6,
title = "Nano-scale type-II InP/GaAsSb DHBTs to reach THz cutoff frequencies",
abstract = "We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm2 emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz cutoff frequencies.",
keywords = "Heterojunction bipolar transistor, Indium phosphide, Scaling, Terahertz",
author = "William Snodgrass and Milton Feng",
year = "2008",
language = "English (US)",
isbn = "1893580113",
series = "2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008",
booktitle = "2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008",
note = "23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 ; Conference date: 14-04-2008 Through 17-04-2008",
}