Nano-indented Ge surfaces by metal-assisted chemical etching (MacEtch) and its application for optoelectronic devices

Munho Kim, Soongyu Yi, Jeong Dong Kim, Shih Chia Liu, Weidong Zhou, Zongfu Yu, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Surface reflection is one of the major limiting factors to determine light absorption performance of optoelectronic devices. In recent years, light management using various types of nanostructures has gained much attention [1]. However, fabricating the nanostructures by conventional dry etching results in damage within the crystal structures attributed to high energy ions. Metal assisted chemical etching (MacEtch) is an alternative method to produce the nanostructures [2]. Because MacEtch is fundamentally a wet etch which does not involve high energy ions, structural defects can be avoided [3,4]. Therefore, the technique has been widely used to create surface texturing for the optoelectronic and photonic applications. However, the MacEtch enabled nanostructures have been mainly formed on Si and III-V compounds [5,6]. In this report, we present a novel MacEtch based technique to create nano-indentations on Ge and the enhanced responsivity and reduced dark current of Ge photodiodes.

Original languageEnglish (US)
Title of host publication75th Annual Device Research Conference, DRC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509063277
DOIs
StatePublished - Aug 1 2017
Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
Duration: Jun 25 2017Jun 28 2017

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other75th Annual Device Research Conference, DRC 2017
CountryUnited States
CitySouth Bend
Period6/25/176/28/17

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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