Multiple wavelength, anisotropically polarized midinfrared electroluminescence from self-assembled InAs quantum dots grown in AlGaAsGaAs heterostructures has been observed at 77 K. Electrons are injected into excited quantum dot states using a graded AlGaAs injector. Direct tunneling out of the quantum dot excited states is prevented by means of a superlattice electron filter. Two midinfrared peaks are seen in the electrically pumped surface emission spectra of the device. The emission peaks are orthogonally polarized within the growth plane, indicating photon emission from intersublevel electron transitions within anisotropically shaped quantum dots.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)