TY - GEN
T1 - Multiple versus single quantum well transistor laser performances
AU - Taghavi, Iman
AU - Kaatuzian, Hassan
AU - Leburton, Jean-Pierre
PY - 2012/12/1
Y1 - 2012/12/1
N2 - We present a transport-based model that can be used to investigate the optoelectronic operations of transistor lasers with multiple quantum well. Significant enhancement in device performances is anticipated when the MQW structure is properly designed.
AB - We present a transport-based model that can be used to investigate the optoelectronic operations of transistor lasers with multiple quantum well. Significant enhancement in device performances is anticipated when the MQW structure is properly designed.
UR - http://www.scopus.com/inward/record.url?scp=85086493034&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85086493034&partnerID=8YFLogxK
U2 - 10.1364/iprsn.2012.im4b.5
DO - 10.1364/iprsn.2012.im4b.5
M3 - Conference contribution
SN - 9781557529466
T3 - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2012
BT - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2012
T2 - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2012
Y2 - 17 June 2012 through 20 June 2012
ER -