In recent years considerable interest has been shown in impurity-induced compositional disordering of III-V compound semiconductor devices, especially in efforts directed towards fabricating index-guided buried heterostructure lasers and other unique photonic and electronic devices. In this work we describe the study of compositional disordering induced by MeV implantation of oxygen and krypton into AlAs-GaAs superlattices and the fabrication of index-guided quantum well heterostructure lasers by MeV oxygen ion implantation.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering