Abstract
A method is described to implement multiple output domino logic (MODL) gates in silicon-on-insulator (SOI). Comparison of MODL and SOI-Specific MODL (SSMODL) was also performed. The results show that the SSMODL reduces delay by 1.45X and area about 1.5X, while eliminating the bipolar leakage problem while mapping MODL designs from bulk-Si to SOI.
| Original language | English (US) |
|---|---|
| Pages | 59-60 |
| Number of pages | 2 |
| State | Published - 2001 |
| Event | 2001 IEEE International SOI Conference - Durango, CO, United States Duration: Oct 1 2001 → Oct 4 2001 |
Other
| Other | 2001 IEEE International SOI Conference |
|---|---|
| Country/Territory | United States |
| City | Durango, CO |
| Period | 10/1/01 → 10/4/01 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering