Multiphysics characterization of large-scale through-silicon-via structures

Tianjian Lu, Jianming Jin, Er Ping Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The thermal analysis is coupled with the full-wave electromagnetic analysis in order to accurately predict the electrical behaviors of through-silicon-via (TSV) structures. The cosimulation is implemented with the finite element method. A highly efficient domain decomposition scheme is introduced into the co-simulation to handle large-scale massively coupled TSV structures.

Original languageEnglish (US)
Title of host publication2015 31st International Review of Progress in Applied Computational Electromagnetics, ACES 2015
PublisherApplied Computational Electromagnetics Society (ACES)
ISBN (Electronic)9780996007818
StatePublished - May 15 2015
Event31st International Review of Progress in Applied Computational Electromagnetics, ACES 2015 - Williamsburg, United States
Duration: Mar 22 2015Mar 26 2015

Publication series

NameAnnual Review of Progress in Applied Computational Electromagnetics
Volume2015-May

Other

Other31st International Review of Progress in Applied Computational Electromagnetics, ACES 2015
CountryUnited States
CityWilliamsburg
Period3/22/153/26/15

Keywords

  • Finite element tearing and interconnecting multiphysics
  • Through-silicon-via

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Lu, T., Jin, J., & Li, E. P. (2015). Multiphysics characterization of large-scale through-silicon-via structures. In 2015 31st International Review of Progress in Applied Computational Electromagnetics, ACES 2015 [7109635] (Annual Review of Progress in Applied Computational Electromagnetics; Vol. 2015-May). Applied Computational Electromagnetics Society (ACES).