Multilevel Si doping in GaAs using a single AsCl3:SiCl 4 doping source

V. Eu, M. Feng, T. Zielinski, J. M. Whelan

Research output: Contribution to journalArticle

Abstract

Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.

Original languageEnglish (US)
Pages (from-to)1266-1268
Number of pages3
JournalJournal of Applied Physics
Volume53
Issue number2
DOIs
StatePublished - Dec 1 1982

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partial pressure
pressure ratio
inlet flow
flow velocity
adjusting
vapor deposition
liquids

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Multilevel Si doping in GaAs using a single AsCl3:SiCl 4 doping source. / Eu, V.; Feng, M.; Zielinski, T.; Whelan, J. M.

In: Journal of Applied Physics, Vol. 53, No. 2, 01.12.1982, p. 1266-1268.

Research output: Contribution to journalArticle

Eu, V. ; Feng, M. ; Zielinski, T. ; Whelan, J. M. / Multilevel Si doping in GaAs using a single AsCl3:SiCl 4 doping source. In: Journal of Applied Physics. 1982 ; Vol. 53, No. 2. pp. 1266-1268.
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