Multilevel Si doping in GaAs using a single AsCl3:SiCl 4 doping source

V. Eu; M. Feng; T. Zielinski; J. M. Whelan

doi:10.1063/1.330585

Multilevel Si doping in GaAs using a single AsCl₃:SiCl ₄ doping source

V. Eu, M. Feng, T. Zielinski, J. M. Whelan

Research output: Contribution to journal › Article › peer-review

Abstract

Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl₃:SiCl₄ liquid doping source with a constant doping flow rate in an AsCl₃/H₂/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H₂ partial pressure ratios. The H₂ is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H₂ to HCl partial pressure ratio for a fixed SiCl₄ inlet flow.

Original language	English (US)
Pages (from-to)	1266-1268
Number of pages	3
Journal	Journal of Applied Physics
Volume	53
Issue number	2
DOIs	https://doi.org/10.1063/1.330585
State	Published - Dec 1 1982
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.",

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AU - Feng, M.

AU - Zielinski, T.

AU - Whelan, J. M.

PY - 1982/12/1

Y1 - 1982/12/1

N2 - Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.

AB - Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.

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