Multilevel Si doping in GaAs using a single AsCl3:SiCl 4 doping source

V. Eu; M. Feng; T. Zielinski; J. M. Whelan

doi:10.1063/1.330585

Multilevel Si doping in GaAs using a single AsCl₃:SiCl ₄ doping source

V. Eu, M. Feng, T. Zielinski, J. M. Whelan

Research output: Contribution to journal › Article

Abstract

Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl₃:SiCl₄ liquid doping source with a constant doping flow rate in an AsCl₃/H₂/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H₂ partial pressure ratios. The H₂ is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H₂ to HCl partial pressure ratio for a fixed SiCl₄ inlet flow.

Original language	English (US)
Pages (from-to)	1266-1268
Number of pages	3
Journal	Journal of Applied Physics
Volume	53
Issue number	2
DOIs	https://doi.org/10.1063/1.330585
State	Published - Dec 1 1982
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{88e98da82c6f44ef804c9a56d1b5b2f5,

title = "Multilevel Si doping in GaAs using a single AsCl3:SiCl 4 doping source",

abstract = "Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.",

author = "V. Eu and M. Feng and T. Zielinski and Whelan, {J. M.}",

year = "1982",

month = dec,

day = "1",

doi = "10.1063/1.330585",

language = "English (US)",

volume = "53",

pages = "1266--1268",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Multilevel Si doping in GaAs using a single AsCl3:SiCl 4 doping source

AU - Eu, V.

AU - Feng, M.

AU - Zielinski, T.

AU - Whelan, J. M.

PY - 1982/12/1

Y1 - 1982/12/1

N2 - Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.

AB - Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.

UR - http://www.scopus.com/inward/record.url?scp=0020091054&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020091054&partnerID=8YFLogxK

U2 - 10.1063/1.330585

DO - 10.1063/1.330585

M3 - Article

AN - SCOPUS:0020091054

VL - 53

SP - 1266

EP - 1268

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -