Abstract
Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1266-1268 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 53 |
| Issue number | 2 |
| DOIs | |
| State | Published - Dec 1 1982 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Multilevel Si doping in GaAs using a single AsCl3:SiCl 4 doping source. / Eu, V.; Feng, M.; Zielinski, T.; Whelan, J. M.
In: Journal of Applied Physics, Vol. 53, No. 2, 01.12.1982, p. 1266-1268.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Multilevel Si doping in GaAs using a single AsCl3:SiCl 4 doping source
AU - Eu, V.
AU - Feng, M.
AU - Zielinski, T.
AU - Whelan, J. M.
PY - 1982/12/1
Y1 - 1982/12/1
N2 - Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.
AB - Multilevel Si-doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.
UR - http://www.scopus.com/inward/record.url?scp=0020091054&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0020091054&partnerID=8YFLogxK
U2 - 10.1063/1.330585
DO - 10.1063/1.330585
M3 - Article
AN - SCOPUS:0020091054
VL - 53
SP - 1266
EP - 1268
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
ER -