Multicarrier transport in epitaxial multilayer graphene

Yu Ming Lin, Christos Dimitrakopoulos, Damon B. Farmer, Shu Jen Han, Yanqing Wu, Wenjuan Zhu, D. Kurt Gaskill, Joseph L. Tedesco, Rachael L. Myers-Ward, Charles R. Eddy, Alfred Grill, Phaedon Avouris

Research output: Contribution to journalArticlepeer-review

Abstract

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multilayer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n-and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.

Original languageEnglish (US)
Article number112107
JournalApplied Physics Letters
Volume97
Issue number11
DOIs
StatePublished - Sep 13 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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