Multiband mobility in semiconducting carbon nanotubes

Yang Zhao, Albert Liao, Eric Pop

Research output: Contribution to journalArticle

Abstract

We present new data and a compact mobility model for semiconducting single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10000 cm2/V • s at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.

Original languageEnglish (US)
Article number5233799
Pages (from-to)1078-1081
Number of pages4
JournalIEEE Electron Device Letters
Volume30
Issue number10
DOIs
StatePublished - Oct 1 2009

Keywords

  • Carbon nanotube (CNT)
  • Mean free path (MFP)
  • Mobility
  • Modeling
  • Transistor
  • Transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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