Abstract
We present new data and a compact mobility model for semiconducting single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10000 cm2/V • s at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.
Original language | English (US) |
---|---|
Article number | 5233799 |
Pages (from-to) | 1078-1081 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2009 |
Keywords
- Carbon nanotube (CNT)
- Mean free path (MFP)
- Mobility
- Modeling
- Transistor
- Transport
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering