MOVPE growth of oxide-confined vertical-cavity surface emitting lasers

H. Q. Hou, K. D. Choquette, B. E. Hammons, W. G. Breiland, K. M. Geib

Research output: Contribution to journalConference article

Abstract

Metallorganic vapor phase epitaxy (MOVPE) technology is increasingly used as a platform for the growth of vertical cavity surface emitting lasers (VCSEL) because of its high throughput, low surface defect density, continuous compositional grading control, and the flexibility for materials and dopant choices. The MOVPE capability of extremely high wafer uniformity, control accuracy and composition, and run-to-run reproducibility are presented. The growth is performed on an EMCORE GS3200 rotating-disk MOVPE reactor. A normal-incidence reflectometer using a W-halogen lamp and a silicon detector with a 10-nm interference filter is mounted on top of a mini-flange viewport of the reactor.

Original languageEnglish (US)
Pages (from-to)301-302
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
DOIs
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA
Duration: Nov 10 1997Nov 13 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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