High-performance 0.15µm gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent ‘kink-free’ DC characteristics with extrinsic transconductance gm of 1080mS/mm at a drain current of 5O8mA/mm have been achieved. A unity current-gain cutoff frequency fT of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown latticematched InAlAs/InGaAs MODFETs.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Feb 1993|
- Field-effect transistors
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering