MOVPE-grown InAlAs/InGaAs/Inp MODFETs with very high fT

K. Nummila; M. Tong; A. Ketterson; I. Adesida; C. Caneau; R. Bhat

doi:10.1049/el:19930187

MOVPE-grown InAlAs/InGaAs/Inp MODFETs with very high f_T

K. Nummila, M. Tong, A. Ketterson, I. Adesida, C. Caneau, R. Bhat

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Abstract

High-performance 0.15µm gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent ‘kink-free’ DC characteristics with extrinsic transconductance g_m of 1080mS/mm at a drain current of 5O8mA/mm have been achieved. A unity current-gain cutoff frequency f_T of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown latticematched InAlAs/InGaAs MODFETs.

Original language	English (US)
Pages (from-to)	274-275
Number of pages	2
Journal	Electronics Letters
Volume	29
Issue number	3
DOIs	https://doi.org/10.1049/el:19930187
State	Published - Feb 1993

Keywords

Field-effect transistors
Semiconductor devices and materials
Transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19930187

Library availability

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Cite this

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title = "MOVPE-grown InAlAs/InGaAs/Inp MODFETs with very high fT",

abstract = "High-performance 0.15µm gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent {\textquoteleft}kink-free{\textquoteright} DC characteristics with extrinsic transconductance gm of 1080mS/mm at a drain current of 5O8mA/mm have been achieved. A unity current-gain cutoff frequency fT of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown latticematched InAlAs/InGaAs MODFETs.",

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T1 - MOVPE-grown InAlAs/InGaAs/Inp MODFETs with very high fT

AU - Nummila, K.

AU - Tong, M.

AU - Ketterson, A.

AU - Adesida, I.

AU - Caneau, C.

AU - Bhat, R.

PY - 1993/2

Y1 - 1993/2

N2 - High-performance 0.15µm gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent ‘kink-free’ DC characteristics with extrinsic transconductance gm of 1080mS/mm at a drain current of 5O8mA/mm have been achieved. A unity current-gain cutoff frequency fT of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown latticematched InAlAs/InGaAs MODFETs.

AB - High-performance 0.15µm gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent ‘kink-free’ DC characteristics with extrinsic transconductance gm of 1080mS/mm at a drain current of 5O8mA/mm have been achieved. A unity current-gain cutoff frequency fT of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown latticematched InAlAs/InGaAs MODFETs.

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KW - Semiconductor devices and materials

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