MOVPE-grown InAlAs/InGaAs/Inp MODFETs with very high fT

K. Nummila, M. Tong, A. Ketterson, I. Adesida, C. Caneau, R. Bhat

Research output: Contribution to journalArticle

Abstract

High-performance 0.15µm gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent ‘kink-free’ DC characteristics with extrinsic transconductance gm of 1080mS/mm at a drain current of 5O8mA/mm have been achieved. A unity current-gain cutoff frequency fT of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown latticematched InAlAs/InGaAs MODFETs.

Original languageEnglish (US)
Pages (from-to)274-275
Number of pages2
JournalElectronics Letters
Volume29
Issue number3
DOIs
StatePublished - Feb 1993

Keywords

  • Field-effect transistors
  • Semiconductor devices and materials
  • Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Nummila, K., Tong, M., Ketterson, A., Adesida, I., Caneau, C., & Bhat, R. (1993). MOVPE-grown InAlAs/InGaAs/Inp MODFETs with very high fT. Electronics Letters, 29(3), 274-275. https://doi.org/10.1049/el:19930187