Abstract

In this paper, we describe the development of moving mesh adaptation framework and its application to charge transport simulation of semiconductor devices, with emphasis on its relevance to power semiconductor devices. Mesh adaptivity in the context of semiconductor device simulation is an important problem and can help deal with the convergence and numerical stability issues, as well as automate the meshing process. We demonstrate the efficacy of our proposed meshing scheme through the simulation of a GaN-based power diode, as well as a Si diode with a non-rectangular doping profile, by externally coupling our framework to Sentaurus Device TCAD. We perform error analysis and compare our results with simulations based on high-resolution uniform structured meshes as well as manually refined axis-aligned meshes. In addition to the benefits in terms of accuracy, automation, and generality, our method can be regarded as a stepping stone toward computationally scalable and adaptive semiconductor device simulations.

Original languageEnglish (US)
Pages (from-to)1621-1629
Number of pages9
JournalJournal of Computational Electronics
Volume17
Issue number4
DOIs
StatePublished - Dec 1 2018

Fingerprint

Moving Mesh
Device Simulation
Mesh Adaptation
Semiconductor devices
Semiconductor Device Simulation
mesh
semiconductor devices
Semiconductor Devices
Meshing
Diode
Mesh Adaptivity
Mesh
Charge Transport
Simulation
simulation
Convergence of numerical methods
Numerical Stability
Error Analysis
Error analysis
Automation

Keywords

  • Error estimation
  • GaN
  • Gallium nitride
  • Mesh adaptation
  • Moving mesh
  • Power
  • Semiconductor device simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

Cite this

Moving mesh adaptation for Si and GaN-based power device simulation. / Ismail, Fawad; Sarker, Palash; Mohamed, Mohamed; Kim, Kyekyoon; Ravaioli, Umberto.

In: Journal of Computational Electronics, Vol. 17, No. 4, 01.12.2018, p. 1621-1629.

Research output: Contribution to journalArticle

Ismail, Fawad ; Sarker, Palash ; Mohamed, Mohamed ; Kim, Kyekyoon ; Ravaioli, Umberto. / Moving mesh adaptation for Si and GaN-based power device simulation. In: Journal of Computational Electronics. 2018 ; Vol. 17, No. 4. pp. 1621-1629.
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