Mott transition on a triangular lattice

Dimitrios Galanakis, Tudor D. Stanescu, Philip Phillips

Research output: Contribution to journalArticlepeer-review

Abstract

We study the paramagnetic side of the phase diagram of the cobaltates, Nax CoO2, using an implementation of the cellular dynamical mean-field theory with a noncrossing approximation impurity solver for the one-band Hubbard model on a triangular lattice. At low doping we find that the low-energy physics is dominated by a quasi-dispersionless band generated by strong correlation physics. At half filling, we find a metal-insulator transition at a critical value of the on-site interaction Uc =5.6±0.15t which depends weakly on the cluster size. The onset of the metallic state occurs through the growth of a coherence peak at the chemical potential. Away from half filling, in the electron-doped regime, the system is metallic with a large continuous Fermi surface as seen experimentally. Upon hole doping, a quasi-non-dispersing band emerges at the top of the lower Hubbard band and controls the low-energy physics. This band is a clear signature of non-Fermi-liquid behavior and cannot be captured by any weakly coupled approach. This quasi-dispersionless band, which persists in a certain range of dopings, has been observed experimentally. We also investigate the pseudogap phenomenon in the context of a triangular lattice and propose a general framework for discussing the pseudogap problem. This framework involves a momentum-dependent characterization of the low-energy physics and links the appearance of the pseudogap to a reconstruction of the Fermi surface without invoking any long-range order or symmetry breaking. Within this framework we predict the existence of a pseudogap for the two-dimensional Hubbard model on a triangular lattice in the weakly hole-doped regime.

Original languageEnglish (US)
Article number115116
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number11
DOIs
StatePublished - Mar 3 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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