@inproceedings{32ecdd65c1b74e81a37f0472f2089e9a,
title = "MOS models for LIM transient simulations",
abstract = "This paper presents an approach for the transient simulation of circuits through the latency insertion model using advanced models for MOS transistors. By taking into account the dynamic charge storage effects in short-channel devices a more accurate simulation of high-speed digital and analog circuits via the latency insertion method can be performed. The approach makes use of the SPICE LEVEL 3 transistor model for MOSFETs. In addition the use of the latency insertion method allows better convergence and higher computational speed for the simulation. Several computer simulations are performed to validate the method. Results show improvement in accuracy by using the high-level models.",
keywords = "LIM, MOSFET, capacitance, latency, simulation",
author = "Maryam Hajimiri and Schutt-Ain{\'e}, {Jos{\'e} E.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 24th IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2015 ; Conference date: 25-10-2015 Through 28-10-2015",
year = "2015",
month = dec,
day = "3",
doi = "10.1109/EPEPS.2015.7347159",
language = "English (US)",
series = "2015 IEEE 24th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "189--192",
booktitle = "2015 IEEE 24th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2015",
address = "United States",
}