Morphology of epitaxial TiN(001) grown by magnetron sputtering

Brian W. Karr; I. Petrov; David G. Cahill; J. E. Greene

doi:10.1063/1.118675

Morphology of epitaxial TiN(001) grown by magnetron sputtering

Brian W. Karr, I. Petrov, David G. Cahill, J. E. Greene

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Abstract

The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650<T<750 °C using reactive magnetron sputter deposition in pure N₂. The surface morphology is dominated by growth mounds with an aspect ratio of ≃0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, t^α, with α=0.25±0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature.

Original language	English (US)
Pages (from-to)	1703-1705
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	13
DOIs	https://doi.org/10.1063/1.118675
State	Published - Mar 31 1997

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Physics and Astronomy (miscellaneous)

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10.1063/1.118675

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abstract = "The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650<T<750 °C using reactive magnetron sputter deposition in pure N2. The surface morphology is dominated by growth mounds with an aspect ratio of ≃0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, tα, with α=0.25±0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature.",

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AU - Greene, J. E.

PY - 1997/3/31

Y1 - 1997/3/31

N2 - The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650<T<750 °C using reactive magnetron sputter deposition in pure N2. The surface morphology is dominated by growth mounds with an aspect ratio of ≃0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, tα, with α=0.25±0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature.

AB - The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650<T<750 °C using reactive magnetron sputter deposition in pure N2. The surface morphology is dominated by growth mounds with an aspect ratio of ≃0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, tα, with α=0.25±0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature.

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Morphology of epitaxial TiN(001) grown by magnetron sputtering

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