Morphology of epitaxial TiN(001) grown by magnetron sputtering

Brian W. Karr, I. Petrov, David G. Cahill, J. E. Greene

Research output: Contribution to journalArticlepeer-review


The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650<T<750 °C using reactive magnetron sputter deposition in pure N2. The surface morphology is dominated by growth mounds with an aspect ratio of ≃0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, tα, with α=0.25±0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature.

Original languageEnglish (US)
Pages (from-to)1703-1705
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - Mar 31 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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