Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire

Diego J. Díaz; Todd L. Williamson; Ilesanmi Adesida; Paul W. Bohn; Richard J. Molnar

doi:10.1063/1.1628833

Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire

Diego J. Díaz, Todd L. Williamson, Ilesanmi Adesida, Paul W. Bohn, Richard J. Molnar

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Abstract

Morphology and luminescence properties of porous Gallium Nitride (GaN) were investigated. Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire was carried out to produce porous gallium nitride. Cathodoluminescence (CL) spectroscopy shows band gap emission at 368 nm before and after etching with only small shifts in the wavelength of maximum emission. Results show that the intensity of CL emission decreases with etch time as the GaN is consumed.

Original language	English (US)
Pages (from-to)	7526-7534
Number of pages	9
Journal	Journal of Applied Physics
Volume	94
Issue number	12
DOIs	https://doi.org/10.1063/1.1628833
State	Published - Dec 15 2003

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General Physics and Astronomy

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10.1063/1.1628833

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title = "Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire",

abstract = "Morphology and luminescence properties of porous Gallium Nitride (GaN) were investigated. Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire was carried out to produce porous gallium nitride. Cathodoluminescence (CL) spectroscopy shows band gap emission at 368 nm before and after etching with only small shifts in the wavelength of maximum emission. Results show that the intensity of CL emission decreases with etch time as the GaN is consumed.",

author = "D{\'i}az, {Diego J.} and Williamson, {Todd L.} and Ilesanmi Adesida and Bohn, {Paul W.} and Molnar, {Richard J.}",

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language = "English (US)",

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T1 - Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire

AU - Díaz, Diego J.

AU - Williamson, Todd L.

AU - Adesida, Ilesanmi

AU - Bohn, Paul W.

AU - Molnar, Richard J.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - Morphology and luminescence properties of porous Gallium Nitride (GaN) were investigated. Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire was carried out to produce porous gallium nitride. Cathodoluminescence (CL) spectroscopy shows band gap emission at 368 nm before and after etching with only small shifts in the wavelength of maximum emission. Results show that the intensity of CL emission decreases with etch time as the GaN is consumed.

AB - Morphology and luminescence properties of porous Gallium Nitride (GaN) were investigated. Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire was carried out to produce porous gallium nitride. Cathodoluminescence (CL) spectroscopy shows band gap emission at 368 nm before and after etching with only small shifts in the wavelength of maximum emission. Results show that the intensity of CL emission decreases with etch time as the GaN is consumed.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire

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