Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films

J. E. Van Nostrand, David G. Cahill, I. Petrov, J. E. Greene

Research output: Contribution to journalArticlepeer-review

Abstract

Tensile-strained Si0.6Ge0.4 alloys are deposited on Ge(001) by molecular beam epitaxy. The morphology and microstructure of as-deposited (6.5-130 nm thick deposited at 325-500 °C) and annealed (2 min at 625 or 700 °C) epitaxial films are studied by in situ scanning tunneling microscopy, ex situ atomic force microscopy, and transmission electron microscopy. 6.5 nm thick films deposited at 325 and 410 °C are atomically flat with low densities of partial dislocations: stress relaxation of 6.5 nm thick films is limited by dislocation blocking. The surface morphology of thicker films grown at 410 °C is strongly influenced by the interactions of stacking faults and surface steps. Annealing of 13 nm thick films at 700 °C produces a severe roughening with the formation of a regular pattern of 50 nm deep surface pits bounded by {113} facets.

Original languageEnglish (US)
Pages (from-to)1096-1102
Number of pages7
JournalJournal of Applied Physics
Volume83
Issue number2
DOIs
StatePublished - Jan 15 1998

ASJC Scopus subject areas

  • General Physics and Astronomy

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