Monte Carlo study of the quasi two-dimensional electron gas in the high electron mobility transistor

Umberto Ravaioli, D. K. Ferry

Research output: Contribution to journalArticle

Abstract

The quasi two-dimensional electron gas in the conduction channel of a High Electron Mobility Transistor (H.E.M.T.) has been investigated using an Ensemble Monte Carlo (E.M.C.) method. Acoustic and polar optical scatterings are considered in the channel and quantization effects are included using a two subband triangular well approximation. Self-scattering is introduced using a technique which allows to account for the non-uniformity of the channel. The subband populations are evaluated at different drain voltages, showing that, due to the highly non-uniform occupation along the channel, the two- and three-dimensional features of the electrons need to be fully included.

Original languageEnglish (US)
Pages (from-to)75-78
Number of pages4
JournalSuperlattices and Microstructures
Volume2
Issue number1
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

Fingerprint

Two dimensional electron gas
High electron mobility transistors
high electron mobility transistors
electron gas
Scattering
Monte Carlo methods
Acoustics
Electrons
Electric potential
scattering
nonuniformity
occupation
Monte Carlo method
conduction
acoustics
electric potential
approximation
electrons

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Monte Carlo study of the quasi two-dimensional electron gas in the high electron mobility transistor. / Ravaioli, Umberto; Ferry, D. K.

In: Superlattices and Microstructures, Vol. 2, No. 1, 01.01.1986, p. 75-78.

Research output: Contribution to journalArticle

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