Monte Carlo study of the quasi two-dimensional electron gas in the high electron mobility transistor

The quasi two-dimensional electron gas in the conduction channel of a High Electron Mobility Transistor (H.E.M.T.) has been investigated using an Ensemble Monte Carlo (E.M.C.) method. Acoustic and polar optical scatterings are considered in the channel and quantization effects are included using a two subband triangular well approximation. Self-scattering is introduced using a technique which allows to account for the non-uniformity of the channel. The subband populations are evaluated at different drain voltages, showing that, due to the highly non-uniform occupation along the channel, the two- and three-dimensional features of the electrons need to be fully included.