Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxy

S. A. Barnett, A. Rockett

Research output: Contribution to journalArticle

Abstract

A Monte Carlo simulation of Si(001) crystal growth and surface reconstruction during molecular beam epitaxy is described. The simulation is based on the solid-on-solid model and depicts the diamond lattice and surface reconstructions explicitly. Si deposition, surface diffusion, and the formation and reorientation of surface dimer pairs are accounted for. The results indicate that surface dimer formation plays an important role in determining the crystal growth kinetics, which is observed to be a combination of step propagation and two-dimensional island nucleation modes. At least 5 diffusion events per deposited atom and second nearest neighbor interaction energies E2 ≳ kT were required to yield films with mean-square surface roughnesses of ≲ 0.7 monolayer. Decreasing either the diffusion rate or E2 yielded increasingly rough surfaces. Ordered (2 × 1) rows of dimer pairs were observed when a term accounting for the subsurface strain energy interaction between dimers was included. First-order reflected electron intensity calculations for the simulated surfaces showed strong intensity oscillations with a period of 1 monolayer.

Original languageEnglish (US)
Pages (from-to)133-150
Number of pages18
JournalSurface Science
Volume198
Issue number1-2
DOIs
StatePublished - 1988

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Molecular beam epitaxy
Dimers
molecular beam epitaxy
Surface reconstruction
dimers
Crystallization
Crystal growth
Monolayers
simulation
crystal growth
Diamond
Surface diffusion
Growth kinetics
electron flux density
Strain energy
Diamonds
surface diffusion
Nucleation
crystal surfaces
Surface roughness

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxy. / Barnett, S. A.; Rockett, A.

In: Surface Science, Vol. 198, No. 1-2, 1988, p. 133-150.

Research output: Contribution to journalArticle

Barnett, S. A. ; Rockett, A. / Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxy. In: Surface Science. 1988 ; Vol. 198, No. 1-2. pp. 133-150.
@article{6bec29abf3e2435685d94d0a7f4e793d,
title = "Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxy",
abstract = "A Monte Carlo simulation of Si(001) crystal growth and surface reconstruction during molecular beam epitaxy is described. The simulation is based on the solid-on-solid model and depicts the diamond lattice and surface reconstructions explicitly. Si deposition, surface diffusion, and the formation and reorientation of surface dimer pairs are accounted for. The results indicate that surface dimer formation plays an important role in determining the crystal growth kinetics, which is observed to be a combination of step propagation and two-dimensional island nucleation modes. At least 5 diffusion events per deposited atom and second nearest neighbor interaction energies E2 ≳ kT were required to yield films with mean-square surface roughnesses of ≲ 0.7 monolayer. Decreasing either the diffusion rate or E2 yielded increasingly rough surfaces. Ordered (2 × 1) rows of dimer pairs were observed when a term accounting for the subsurface strain energy interaction between dimers was included. First-order reflected electron intensity calculations for the simulated surfaces showed strong intensity oscillations with a period of 1 monolayer.",
author = "Barnett, {S. A.} and A. Rockett",
year = "1988",
doi = "10.1016/0039-6028(88)90476-1",
language = "English (US)",
volume = "198",
pages = "133--150",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxy

AU - Barnett, S. A.

AU - Rockett, A.

PY - 1988

Y1 - 1988

N2 - A Monte Carlo simulation of Si(001) crystal growth and surface reconstruction during molecular beam epitaxy is described. The simulation is based on the solid-on-solid model and depicts the diamond lattice and surface reconstructions explicitly. Si deposition, surface diffusion, and the formation and reorientation of surface dimer pairs are accounted for. The results indicate that surface dimer formation plays an important role in determining the crystal growth kinetics, which is observed to be a combination of step propagation and two-dimensional island nucleation modes. At least 5 diffusion events per deposited atom and second nearest neighbor interaction energies E2 ≳ kT were required to yield films with mean-square surface roughnesses of ≲ 0.7 monolayer. Decreasing either the diffusion rate or E2 yielded increasingly rough surfaces. Ordered (2 × 1) rows of dimer pairs were observed when a term accounting for the subsurface strain energy interaction between dimers was included. First-order reflected electron intensity calculations for the simulated surfaces showed strong intensity oscillations with a period of 1 monolayer.

AB - A Monte Carlo simulation of Si(001) crystal growth and surface reconstruction during molecular beam epitaxy is described. The simulation is based on the solid-on-solid model and depicts the diamond lattice and surface reconstructions explicitly. Si deposition, surface diffusion, and the formation and reorientation of surface dimer pairs are accounted for. The results indicate that surface dimer formation plays an important role in determining the crystal growth kinetics, which is observed to be a combination of step propagation and two-dimensional island nucleation modes. At least 5 diffusion events per deposited atom and second nearest neighbor interaction energies E2 ≳ kT were required to yield films with mean-square surface roughnesses of ≲ 0.7 monolayer. Decreasing either the diffusion rate or E2 yielded increasingly rough surfaces. Ordered (2 × 1) rows of dimer pairs were observed when a term accounting for the subsurface strain energy interaction between dimers was included. First-order reflected electron intensity calculations for the simulated surfaces showed strong intensity oscillations with a period of 1 monolayer.

UR - http://www.scopus.com/inward/record.url?scp=0001898974&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001898974&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(88)90476-1

DO - 10.1016/0039-6028(88)90476-1

M3 - Article

AN - SCOPUS:0001898974

VL - 198

SP - 133

EP - 150

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-2

ER -