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Monte Carlo Simulations of Double-Gate MOSFETs
Gulzar A. Kathawala
, Brian Winstead
,
Umberto Ravaioli
Coordinated Science Lab
Electrical and Computer Engineering
Micro and Nanotechnology Laboratory
Grainger College of Engineering
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Keyphrases
Monte Carlo Simulation
100%
Quantum Effects
100%
Double-gate MOSFET
100%
Size Quantization
20%
Interface Scattering
20%
Charge Density
20%
Schrödinger Equation
20%
Transverse Field
20%
Quantum Corrections
20%
N-channel
20%
Oxide Interfaces
20%
Double-gate Device
20%
Quantum Mechanical Effects
20%
Carrier Velocity
20%
Full-band
20%
Monte Carlo Simulator
20%
Double Gate Structure
20%
Second-order Effect
20%
Physics
Field Effect Transistor
100%
Monte Carlo Method
100%
Monte Carlo
50%
Oxide Interface
50%
Quantum Structure
50%