A fullband Monte Carlo simulator has been used to analyze the performance of scaled n-channel double-gate (DG) MOSFETs. Size quantization in the channel is accounted for by using a quantum correction based on Schrödinger equation. Scattering induced by the oxide interface is included with a model calibrated with measurements for bulk devices. The detailed self-consistent treatment of quantum effects leads to several interesting observations. We observe that the sheet charge in DG devices does not decrease as much as expected in bulk devices when quantum-mechanical effects are included. The average carrier velocity in the channel is also somewhat reduced by quantum effects, as a second-order effect. In the test cases studied here, application of quantum effects causes a reduction in simulated current not exceeding 15%. In a DG structure, quantum effects tend to concentrate the charge density in the center of the channel, where transverse fields are lower. Because of this, interface scattering appears to be less pronounced when quantum effects are included.
- Double-gate MOSFET
- Interface scattering
- Monte Carlo simulation
- Volume inversion
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering