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Monte Carlo simulation of microwave devices
U. Ravaioli
, C. H. Lee, M. B. Patil
Coordinated Science Lab
Electrical and Computer Engineering
Micro and Nanotechnology Lab
Grainger College of Engineering
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peer-review
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Keyphrases
Banded Structure
33%
Boltzmann Transport Equation
66%
Computational Cost
33%
Direct numerical
33%
Field Equations
33%
Heterojunction
33%
Hot Electrons
33%
Microwave Applications
33%
Microwave Devices
100%
Monte Carlo Device Simulations
33%
Monte Carlo Method
66%
Monte Carlo Simulation
100%
Quantum Effects
33%
Semiconductors
33%
Statistical Noise
33%
Steady-state Simulation
33%
Stochastic Solutions
33%
Transient-state Simulation
33%
Engineering
Boltzmann Equation
100%
Computational Cost
50%
Electron Effect
50%
Field Equation
50%
Heterojunctions
50%
Hot Electron
50%
Main Disadvantage
50%
Microwave Devices
100%
Numerical Approach
50%
Quantum Effect
50%
Steady State Simulation
50%
Stochastic Solution
50%
Transients
50%
Physics
Boltzmann Equation
66%
Heterojunctions
33%
Hot Electron
33%
Microwave Technology
33%
Monte Carlo
66%
Monte Carlo Method
33%
Monte Carlo Simulation
100%
Steady State
33%
Transients
33%
Material Science
Heterojunction
100%
Hot Electron
100%
Microwave Technology
100%
Mathematics
Computational Cost
20%
Field Equation
20%
Monte Carlo
100%
Monte Carlo Technique
20%
Numerical Approach
20%
Quantum Effect
20%
Stochastics
20%
Transport Equation
40%