Monte Carlo simulation of microwave devices

U. Ravaioli, C. H. Lee, M. B. Patil

Research output: Contribution to journalArticlepeer-review

Abstract

Particle Monte Carlo techniques provide a stochastic solution of the Boltzmann Transport Equation (BTE). While the main disadvantages of the approach are the computational cost and the presence of statistical noise, Monte Carlo methods are much more mature than direct numerical approaches for the BTE and allow the inclusion of detailed bandstructure models for the semiconductor. The use of full Monte Carlo simulations is necessary when the goal is to understand the physical details of the transport, especially when hot electron effects are dominant. Heterojunctions are easily included and some quantum effects can also be incorporated. We review here the state-of-the-art of large scale Monte Carlo device simulations, focusing on aspects which are relevant for microwave applications. Examples will cover transient and steady-state simulations of important microwave devices. Issues relevant for the coupling of Monte Carlo simulation to field equations will be discussed.

Original languageEnglish (US)
Pages (from-to)167-179
Number of pages13
JournalMathematical and Computer Modelling
Volume23
Issue number8-9
DOIs
StatePublished - 1996

Keywords

  • Hot electron transport
  • III-V compounds
  • Microwave devices
  • Monte Carlo simulation
  • Transient simulation

ASJC Scopus subject areas

  • Modeling and Simulation
  • Computer Science Applications

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