Monte Carlo Simulation of Low-Dimensional Nanostructures

D. Jovanovic; S. Briggs; J. P. Leburton

doi:10.1007/978-1-4757-2124-9_36

Monte Carlo Simulation of Low-Dimensional Nanostructures

D. Jovanovic, S. Briggs, J. P. Leburton

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Features unique to low dimensional systems can be exploited to make Monte Carlo simulations of nanostructures more efficient than bulk methods. Systems near the extreme quantum limit (EQL) are adequately modeled with a few subbands thereby allowing scattering rates to be fully stored in tabular form. For systems away from the EQL, memory constraints prohibit storage of all the scattering rates so the final state selection parameters are computed on-line between flights. We use the latter method to investigate intersubband scattering effects in a 20-subband quasi-1D structure.

Original language	English (US)
Title of host publication	Computational Electronics
Subtitle of host publication	Semiconductor Transport and Device Simulation
Editors	K. Hess, J. P. Leburton, U. Ravaioli
Publisher	Springer
Chapter	36
Pages	177-180
ISBN (Electronic)	9781475721249
ISBN (Print)	9781441951229, 9780792390886
DOIs	https://doi.org/10.1007/978-1-4757-2124-9_36
State	Published - 1991

Publication series

Name	The Springer International Series in Engineering and Computer Science
Volume	113
ISSN (Print)	0893-3405

Keywords

Monte Carlo Program
Optical Phonon Scattering
Intersubband Transition
Polar Optical Phonon
Free Flight

Online availability

10.1007/978-1-4757-2124-9_36

Library availability

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1 Book

Computational Electronics: Semiconductor Transport and Device Simulation
Hess, K. (Editor), Leburton, J. P. (Editor) & Ravaioli, U. (Editor), 1991, Boston: Springer. 268 p. (The Springer International Series in Engineering and Computer Science; vol. 113)
Research output: Book/Report/Conference proceeding › Book

Cite this

Jovanovic, D., Briggs, S., & Leburton, J. P. (1991). Monte Carlo Simulation of Low-Dimensional Nanostructures. In K. Hess, J. P. Leburton, & U. Ravaioli (Eds.), Computational Electronics: Semiconductor Transport and Device Simulation (pp. 177-180). (The Springer International Series in Engineering and Computer Science; Vol. 113). Springer. https://doi.org/10.1007/978-1-4757-2124-9_36

Monte Carlo Simulation of Low-Dimensional Nanostructures. / Jovanovic, D.; Briggs, S.; Leburton, J. P.
Computational Electronics: Semiconductor Transport and Device Simulation. ed. / K. Hess; J. P. Leburton; U. Ravaioli. Springer, 1991. p. 177-180 (The Springer International Series in Engineering and Computer Science; Vol. 113).

Research output: Chapter in Book/Report/Conference proceeding › Chapter

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Monte Carlo Simulation of Low-Dimensional Nanostructures

Abstract

Publication series

Keywords

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Research output

Computational Electronics: Semiconductor Transport and Device Simulation

Cite this