Monte Carlo simulation of InGaAs/AlGaAs/GaAs real-space transfer transistors

M. B. Patil, U. Ravaioli, K. Hess, M. Hueschen

Research output: Contribution to journalArticlepeer-review

Abstract

Three-terminal devices based on real-space transfer (RST) of heated electrons across heterointerfaces, are promising for applications at microwave frequencies. Recently, a real-space transfer transistor (RSTT) similar to the charge injection transistor (CHINT), but with a pseudomorphic InGaAs/AlGaAs/GaAs material system and a collector-up structure has been demonstrated, exhibiting a 60 GHz gain-bandwidth product. The authors analyse the RSTT of Hueschen and coworkers using a self-consistent ensemble Monte Carlo technique. In particular, they focus on the location of RST with respect to the source-to-collector distance. They also propose an RSTT structure with an additional 'gate' electrode for response to changes in the heater voltage.

Original languageEnglish (US)
Article number139
Pages (from-to)B533-B535
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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