Abstract
We report the first tunable monolithically integrated thermoelectric controlled GaAs/AlGaAs vertical-cavity surface-emitting laser diode. The thermoelectric element is the n+-GaAs substrate based on the Peltier effect. A variation of active region temperature of ±7.5 °C has been achieved using ±100 mA of thermoelectric cooler current. The observed wavelength tuning associated with this temperature shift is ±6 Å. The device is useful for applications that require a high degree of frequency stability or small frequency tuning. Some examples of potential applications are in high data rate lightwave transmission, self-electro-optic device switches, and spectroscopy.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 117-119 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 59 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1991 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)