Abstract
Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary InxGa1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free InxGa 1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of InxGa1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.
| Original language | English (US) |
|---|---|
| Title of host publication | 69th Device Research Conference, DRC 2011 - Conference Digest |
| Pages | 101-102 |
| Number of pages | 2 |
| DOIs | |
| State | Published - Dec 1 2011 |
| Event | 69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011 |
Publication series
| Name | Device Research Conference - Conference Digest, DRC |
|---|---|
| ISSN (Print) | 1548-3770 |
Other
| Other | 69th Device Research Conference, DRC 2011 |
|---|---|
| Country | United States |
| City | Santa Barbara, CA |
| Period | 6/20/11 → 6/22/11 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency. / Shin, Jae Cheol; Kim, Kyou Hyun; Hu, Hefei; Yu, Ki Jun; Rogers, John A.; Zuo, Jian Min; Li, Xiuling.
69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 101-102 5994434 (Device Research Conference - Conference Digest, DRC).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency
AU - Shin, Jae Cheol
AU - Kim, Kyou Hyun
AU - Hu, Hefei
AU - Yu, Ki Jun
AU - Rogers, John A.
AU - Zuo, Jian Min
AU - Li, Xiuling
PY - 2011/12/1
Y1 - 2011/12/1
N2 - Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary InxGa1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free InxGa 1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of InxGa1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.
AB - Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary InxGa1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free InxGa 1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of InxGa1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.
UR - http://www.scopus.com/inward/record.url?scp=84880724983&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880724983&partnerID=8YFLogxK
U2 - 10.1109/DRC.2011.5994434
DO - 10.1109/DRC.2011.5994434
M3 - Conference contribution
AN - SCOPUS:84880724983
SN - 9781612842417
T3 - Device Research Conference - Conference Digest, DRC
SP - 101
EP - 102
BT - 69th Device Research Conference, DRC 2011 - Conference Digest
ER -