Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency

Jae Cheol Shin; Kyou Hyun Kim; Hefei Hu; Ki Jun Yu; John A. Rogers; Jian Min Zuo; Xiuling Li

doi:10.1109/DRC.2011.5994434

Monolithically grown In_xGa_1-xAs nanowire on silicon tandem solar cells with high efficiency

Jae Cheol Shin, Kyou Hyun Kim, Hefei Hu, Ki Jun Yu, John A. Rogers, Jian Min Zuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary In_xGa_1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free In_xGa _1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of In_xGa_1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.

Original language	English (US)
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Pages	101-102
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2011.5994434
State	Published - 2011
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	69th Device Research Conference, DRC 2011
Country/Territory	United States
City	Santa Barbara, CA
Period	6/20/11 → 6/22/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/DRC.2011.5994434

Library availability

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Cite this

Shin, J. C., Kim, K. H., Hu, H., Yu, K. J., Rogers, J. A., Zuo, J. M., & Li, X. (2011). Monolithically grown In_xGa_1-xAs nanowire on silicon tandem solar cells with high efficiency. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 101-102). Article 5994434 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994434

Monolithically grown In_xGa_1-xAs nanowire on silicon tandem solar cells with high efficiency. / Shin, Jae Cheol; Kim, Kyou Hyun; Hu, Hefei et al.
69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 101-102 5994434 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shin, JC, Kim, KH, Hu, H, Yu, KJ, Rogers, JA, Zuo, JM & Li, X 2011, Monolithically grown In_xGa_1-xAs nanowire on silicon tandem solar cells with high efficiency. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994434, Device Research Conference - Conference Digest, DRC, pp. 101-102, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 6/20/11. https://doi.org/10.1109/DRC.2011.5994434

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abstract = "Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary InxGa1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free InxGa 1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of InxGa1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.",

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AU - Zuo, Jian Min

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