Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency

Jae Cheol Shin; Kyou Hyun Kim; Hefei Hu; Ki Jun Yu; John A. Rogers; Jian Min Zuo; Xiuling Li

doi:10.1109/DRC.2011.5994434

Monolithically grown In_xGa_1-xAs nanowire on silicon tandem solar cells with high efficiency

Jae Cheol Shin, Kyou Hyun Kim, Hefei Hu, Ki Jun Yu, John A. Rogers, Jian Min Zuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary In_xGa_1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free In_xGa _1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of In_xGa_1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.

Original language	English (US)
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Pages	101-102
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2011.5994434
State	Published - Dec 1 2011
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	69th Device Research Conference, DRC 2011
Country	United States
City	Santa Barbara, CA
Period	6/20/11 → 6/22/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2011.5994434

Fingerprint Dive into the research topics of 'Monolithically grown In<sub>x</sub>Ga<sub>1-x</sub>As nanowire on silicon tandem solar cells with high efficiency'. Together they form a unique fingerprint.

Cite this

Shin, J. C., Kim, K. H., Hu, H., Yu, K. J., Rogers, J. A., Zuo, J. M., & Li, X. (2011). Monolithically grown In_xGa_1-xAs nanowire on silicon tandem solar cells with high efficiency. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 101-102). [5994434] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994434

Monolithically grown In_xGa_1-xAs nanowire on silicon tandem solar cells with high efficiency. / Shin, Jae Cheol; Kim, Kyou Hyun; Hu, Hefei; Yu, Ki Jun; Rogers, John A.; Zuo, Jian Min ; Li, Xiuling.

69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 101-102 5994434 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shin, JC, Kim, KH, Hu, H, Yu, KJ, Rogers, JA, Zuo, JM & Li, X 2011, Monolithically grown In_xGa_1-xAs nanowire on silicon tandem solar cells with high efficiency. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994434, Device Research Conference - Conference Digest, DRC, pp. 101-102, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 6/20/11. https://doi.org/10.1109/DRC.2011.5994434

@inproceedings{7319b7a354d64818832ef868ff2d0a68,

title = "Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency",

abstract = "Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary InxGa1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free InxGa 1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of InxGa1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.",

author = "Shin, {Jae Cheol} and Kim, {Kyou Hyun} and Hefei Hu and Yu, {Ki Jun} and Rogers, {John A.} and Zuo, {Jian Min} and Xiuling Li",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/DRC.2011.5994434",

language = "English (US)",

isbn = "9781612842417",

series = "Device Research Conference - Conference Digest, DRC",

pages = "101--102",

booktitle = "69th Device Research Conference, DRC 2011 - Conference Digest",

note = "69th Device Research Conference, DRC 2011 ; Conference date: 20-06-2011 Through 22-06-2011",

}

TY - GEN

T1 - Monolithically grown InxGa1-xAs nanowire on silicon tandem solar cells with high efficiency

AU - Shin, Jae Cheol

AU - Kim, Kyou Hyun

AU - Hu, Hefei

AU - Yu, Ki Jun

AU - Rogers, John A.

AU - Zuo, Jian Min

AU - Li, Xiuling

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary InxGa1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free InxGa 1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of InxGa1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.

AB - Heteroepitaxial integration of III-V and Si has been researched for many years since the Si is the prevalent platform and III-V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary InxGa1-xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free InxGa 1-xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of InxGa1-xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.

UR - http://www.scopus.com/inward/record.url?scp=84880724983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880724983&partnerID=8YFLogxK

U2 - 10.1109/DRC.2011.5994434

DO - 10.1109/DRC.2011.5994434

M3 - Conference contribution

AN - SCOPUS:84880724983

SN - 9781612842417

T3 - Device Research Conference - Conference Digest, DRC

SP - 101

EP - 102

BT - 69th Device Research Conference, DRC 2011 - Conference Digest

T2 - 69th Device Research Conference, DRC 2011

Y2 - 20 June 2011 through 22 June 2011

ER -