@inproceedings{6664fe8832344cf0a2c861076a892117,
title = "Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies",
abstract = "This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Agohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 μm demonstrated excellent DC and RF characteristics.",
author = "Weifeng Zhao and Niu Jin and Guang Chen and Liang Wang and Ilesanmi Adesida",
year = "2006",
doi = "10.1109/IEDM.2006.346855",
language = "English (US)",
isbn = "1424404398",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",
note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",
}