TY - JOUR
T1 - Monolithic Integration of InAlAs/InGaAs/InP Enhancement- and Depletion-Mode High Electron Mobility Transistors
AU - Mahajan, A.
AU - Fay, P.
AU - Arafa, M.
AU - Cueva, G.
AU - Adesida, I.
N1 - Funding Information:
The authors gratefully acknowledge the technical assistance of C. Youtsey and R. Gnmdbacher. This work was supported at the University of Illinois under NSF grant ECD 89-43166 and JSEP grant “14-96-1-0129.
Publisher Copyright:
© 1996 IEEE.
PY - 1996
Y1 - 1996
N2 - A process for the monolithic integration of enhance¬ment- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/InP material system is reported for gate lengths ranging from 0.3 \un to 1.0 Mm. The E-HEMTs with a 0.3 urn gate length exhibit a threshold voltage of +187 mV and a maximum DC extrinsic transconductance of 625 mS/mm, while a threshold voltage of -443 mV and a transconductance of462 mS/mm are measured for D-HEMTs of the same gate length. Variations of threshold voltage for all devices under study was minimal, with the 0.3 jjm gate length devices showing a standard deviation of 12 mV for the D-HEMTs and only 7 mV for the E-HEMTs. The devices demonstrate excellent RF performance, with the 0.3 um E-HEMTs eJiJhibiting a unity current gain cutoff frequency (ft) of 95 GHz, and the 0.3 pm D-HEMTs yielding a nearly identical ft of 102 GHz. To the best of the authors' knowledge, this is the first report of high speed monolithically integrated E/D HEMTs on lattice-matched InP-based materials.
AB - A process for the monolithic integration of enhance¬ment- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/InP material system is reported for gate lengths ranging from 0.3 \un to 1.0 Mm. The E-HEMTs with a 0.3 urn gate length exhibit a threshold voltage of +187 mV and a maximum DC extrinsic transconductance of 625 mS/mm, while a threshold voltage of -443 mV and a transconductance of462 mS/mm are measured for D-HEMTs of the same gate length. Variations of threshold voltage for all devices under study was minimal, with the 0.3 jjm gate length devices showing a standard deviation of 12 mV for the D-HEMTs and only 7 mV for the E-HEMTs. The devices demonstrate excellent RF performance, with the 0.3 um E-HEMTs eJiJhibiting a unity current gain cutoff frequency (ft) of 95 GHz, and the 0.3 pm D-HEMTs yielding a nearly identical ft of 102 GHz. To the best of the authors' knowledge, this is the first report of high speed monolithically integrated E/D HEMTs on lattice-matched InP-based materials.
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U2 - 10.1109/IEDM.1996.553120
DO - 10.1109/IEDM.1996.553120
M3 - Conference article
AN - SCOPUS:0030399752
SP - 51
EP - 54
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting
Y2 - 8 December 1996 through 11 December 1996
ER -