Abstract
Monolithically integrated metamorphic high electron mobility transistor (HEMT) made on substrates of semiconducting gallium arsenide with gate lengths down to 0.13 micrometres was studied. The device layers were grown on the substrate using molecular beam epitaxy (MBE). Wet chemical etching was carried out and ohmic contacts were formed by furnace alloying in ambient nitrogen. Overlay metallization on the ohmic contacts and measurement pads of the devices was also deposited during gate formation. A shift in the threshold voltage towards positive voltage and enhancement in transconductance was observed due to gate anneal process by direct current and radio frequency measurements.
Original language | English (US) |
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Pages | 49-50 |
Number of pages | 2 |
State | Published - 2001 |
Externally published | Yes |
Event | Device Research Conference (DRC) - Notre Dame, IN, United States Duration: Jun 25 2001 → Jun 27 2001 |
Other
Other | Device Research Conference (DRC) |
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Country/Territory | United States |
City | Notre Dame, IN |
Period | 6/25/01 → 6/27/01 |
ASJC Scopus subject areas
- General Engineering