Monolithic, GaInNAsSb VCSELs at 1.46 μm on GaAs by MBE

M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, J. S. Harris

Research output: Contribution to journalArticle

Abstract

Lasing at 1.460 μm from a monolithic, GaInNAsSb vertical cavity surface emitting laser (VCSEL), the longest wavelength on GaAs to date, is demonstrated. Threshold current was 0.58 A (17 kA/cm2), pulsed with a duty cycle of 0.1%. The VCSEL was cooled to reach threshold, from 700 mA at 0°C to 580 mA at -10°C.

Original languageEnglish (US)
Pages (from-to)1822-1823
Number of pages2
JournalElectronics Letters
Volume39
Issue number25
DOIs
StatePublished - Dec 11 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., & Harris, J. S. (2003). Monolithic, GaInNAsSb VCSELs at 1.46 μm on GaAs by MBE. Electronics Letters, 39(25), 1822-1823. https://doi.org/10.1049/el:20031139