Monolithic, GaInNAsSb VCSELs at 1.46 μm on GaAs by MBE

M. A. Wistey; S. R. Bank; H. B. Yuen; L. L. Goddard; J. S. Harris

doi:10.1049/el:20031139

Monolithic, GaInNAsSb VCSELs at 1.46 μm on GaAs by MBE

M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, J. S. Harris

Research output: Contribution to journal › Article › peer-review

Abstract

Lasing at 1.460 μm from a monolithic, GaInNAsSb vertical cavity surface emitting laser (VCSEL), the longest wavelength on GaAs to date, is demonstrated. Threshold current was 0.58 A (17 kA/cm²), pulsed with a duty cycle of 0.1%. The VCSEL was cooled to reach threshold, from 700 mA at 0°C to 580 mA at -10°C.

Original language	English (US)
Pages (from-to)	1822-1823
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	25
DOIs	https://doi.org/10.1049/el:20031139
State	Published - Dec 11 2003
Externally published	Yes

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Electrical and Electronic Engineering

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10.1049/el:20031139

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abstract = "Lasing at 1.460 μm from a monolithic, GaInNAsSb vertical cavity surface emitting laser (VCSEL), the longest wavelength on GaAs to date, is demonstrated. Threshold current was 0.58 A (17 kA/cm2), pulsed with a duty cycle of 0.1%. The VCSEL was cooled to reach threshold, from 700 mA at 0°C to 580 mA at -10°C.",

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T1 - Monolithic, GaInNAsSb VCSELs at 1.46 μm on GaAs by MBE

AU - Wistey, M. A.

AU - Bank, S. R.

AU - Yuen, H. B.

AU - Goddard, L. L.

AU - Harris, J. S.

PY - 2003/12/11

Y1 - 2003/12/11

N2 - Lasing at 1.460 μm from a monolithic, GaInNAsSb vertical cavity surface emitting laser (VCSEL), the longest wavelength on GaAs to date, is demonstrated. Threshold current was 0.58 A (17 kA/cm2), pulsed with a duty cycle of 0.1%. The VCSEL was cooled to reach threshold, from 700 mA at 0°C to 580 mA at -10°C.

AB - Lasing at 1.460 μm from a monolithic, GaInNAsSb vertical cavity surface emitting laser (VCSEL), the longest wavelength on GaAs to date, is demonstrated. Threshold current was 0.58 A (17 kA/cm2), pulsed with a duty cycle of 0.1%. The VCSEL was cooled to reach threshold, from 700 mA at 0°C to 580 mA at -10°C.

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JF - Electronics Letters

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ER -

Monolithic, GaInNAsSb VCSELs at 1.46 μm on GaAs by MBE

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