@article{eb4753c76f14421a845ea3d86cad2b83,
title = "Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions",
abstract = "Three-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality. A total of six layers of transistor and memristor arrays were vertically integrated into a 3D nanosystem to perform AI tasks, by peeling and stacking of AI processing layers made from bottom-up synthesized two-dimensional materials. This fully monolithic-3D-integrated AI system substantially reduces processing time, voltage drops, latency and footprint due to its densely packed AI processing layers with dense interlayer connectivity. The successful demonstration of this monolithic-3D-integrated AI system will not only provide a material-level solution for hetero-integration of electronics, but also pave the way for unprecedented multifunctional computing hardware with ultimate parallelism.",
author = "Kang, {Ji Hoon} and Heechang Shin and Kim, {Ki Seok} and Song, {Min Kyu} and Doyoon Lee and Yuan Meng and Chanyeol Choi and Suh, {Jun Min} and Kim, {Beom Jin} and Hyunseok Kim and Hoang, {Anh Tuan} and Park, {Bo In} and Guanyu Zhou and Suresh Sundaram and Phuong Vuong and Jiho Shin and Jinyeong Choe and Zhihao Xu and Rehan Younas and Kim, {Justin S.} and Sangmoon Han and Sangho Lee and Kim, {Sun Ok} and Beomseok Kang and Seungju Seo and Hyojung Ahn and Seunghwan Seo and Kate Reidy and Eugene Park and Sungchul Mun and Park, {Min Chul} and Suyoun Lee and Kim, {Hyung Jun} and Kum, {Hyun S.} and Peng Lin and Christopher Hinkle and Abdallah Ougazzaden and Ahn, {Jong Hyun} and Jeehwan Kim and Bae, {Sang Hoon}",
note = "The team at Massachusetts Institute of Technology acknowledges support from the Korea Institute of Science and Technology (nos. 2E32260 and 2E32242). J.-H.A. acknowledges support from the National Research Foundation of Korea (no. NRF-2015R1A3A2066337). C.H. acknowledges support from the National Science Foundation (no. DMR-1921818) and SUPREME, one of seven centres in JUMP 2.0, a Semiconductor Research Corporation programme sponsored by Defense Advanced Research Projects Agency (DARPA). S.-H.B. acknowledges financial support from Washington University in St. Louis and the institute of Materials Science and Engineering for the use of instruments and staff assistance. S.-H.B. also acknowledges that this work was partially supported by Samsung Electronics Co., Ltd. (IO221219-04250-01). This work was carried out in part through the use of MIT.nano{\textquoteright}s facilities. The authors would like to acknowledge Dr. Baoming Wang for assistance in focused ion beam (FIB) sample preparation. M.-K.S. acknowledges support from the National Research Foundation of Korea (no. NRF-2021R1A6A3A14044297). A.O. acknowledges financial support from Georgia Tech Europe in Metz-France.",
year = "2023",
month = dec,
doi = "10.1038/s41563-023-01704-z",
language = "English (US)",
volume = "22",
pages = "1470--1477",
journal = "Nature Materials",
issn = "1476-1122",
publisher = "Nature Publishing Group",
number = "12",
}