Abstract

Monolayer MoS 2 is a promising material for nanoelectronics; however, the lack of nanofabrication tools and processes has made it very challenging to realize nanometer-scale electronic devices from monolayer MoS 2 . Here, we demonstrate the fabrication of monolayer MoS 2 nanoribbon field-effect transistors as narrow as 30 nm using scanning probe lithography (SPL). The SPL process uses a heated nanometer-scale tip to deposit narrow nanoribbon polymer structures onto monolayer MoS 2 . The polymer serves as an etch mask during a XeF 2 vapor etch, which defines the channel of a field-effect transistor (FET). We fabricated seven devices with a channel width ranging from 30 to 370 nm, and the fabrication process was carefully studied by electronic measurements made at each process step. The nanoribbon devices have a current on/off ratio > 10 4 and an extrinsic field-effect mobility up to 8.53 cm 2 /(V s). By comparing a 30 nm wide device with a 60 nm wide device that was fabricated on the same MoS 2 flake, we found the narrower device had a smaller mobility, a lower on/off ratio, and a larger subthreshold swing. To our knowledge, this is the first published work that describes a working transistor device from monolayer MoS 2 with a channel width smaller than 100 nm.

Original languageEnglish (US)
Pages (from-to)2092-2098
Number of pages7
JournalNano letters
Volume19
Issue number3
DOIs
StatePublished - Mar 13 2019

Fingerprint

Nanoribbons
Carbon Nanotubes
Lithography
Monolayers
Transistors
transistors
lithography
Scanning
scanning
probes
Field effect transistors
Polymers
Electronic scales
Fabrication
Nanoelectronics
field effect transistors
Nanotechnology
fabrication
Masks
nanofabrication

Keywords

  • MoS transistor
  • monolayer
  • narrow channel
  • scanning probe lithography

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Monolayer MoS 2 Nanoribbon Transistors Fabricated by Scanning Probe Lithography . / Chen, Sihan; Kim, Sunphil; Chen, Weibing; Yuan, Jiangtan; Bashir, Rashid; Lou, Jun; van der Zande, Arend; King, William Paul.

In: Nano letters, Vol. 19, No. 3, 13.03.2019, p. 2092-2098.

Research output: Contribution to journalArticle

Chen, Sihan ; Kim, Sunphil ; Chen, Weibing ; Yuan, Jiangtan ; Bashir, Rashid ; Lou, Jun ; van der Zande, Arend ; King, William Paul. / Monolayer MoS 2 Nanoribbon Transistors Fabricated by Scanning Probe Lithography In: Nano letters. 2019 ; Vol. 19, No. 3. pp. 2092-2098.
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