Abstract

Monolayer MoS 2 is a promising material for nanoelectronics; however, the lack of nanofabrication tools and processes has made it very challenging to realize nanometer-scale electronic devices from monolayer MoS 2 . Here, we demonstrate the fabrication of monolayer MoS 2 nanoribbon field-effect transistors as narrow as 30 nm using scanning probe lithography (SPL). The SPL process uses a heated nanometer-scale tip to deposit narrow nanoribbon polymer structures onto monolayer MoS 2 . The polymer serves as an etch mask during a XeF 2 vapor etch, which defines the channel of a field-effect transistor (FET). We fabricated seven devices with a channel width ranging from 30 to 370 nm, and the fabrication process was carefully studied by electronic measurements made at each process step. The nanoribbon devices have a current on/off ratio > 10 4 and an extrinsic field-effect mobility up to 8.53 cm 2 /(V s). By comparing a 30 nm wide device with a 60 nm wide device that was fabricated on the same MoS 2 flake, we found the narrower device had a smaller mobility, a lower on/off ratio, and a larger subthreshold swing. To our knowledge, this is the first published work that describes a working transistor device from monolayer MoS 2 with a channel width smaller than 100 nm.

Original languageEnglish (US)
Pages (from-to)2092-2098
Number of pages7
JournalNano letters
Volume19
Issue number3
DOIs
StatePublished - Mar 13 2019

Keywords

  • MoS transistor
  • monolayer
  • narrow channel
  • scanning probe lithography

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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