Molecular dynamics simulations of void and helium bubble stability in amorphous silicon during heavy-ion bombardment

Maria A. Okunlewski, Yinon Ashkenazy, Brent J. Heuser, Robert S. Averback

Research output: Contribution to journalArticlepeer-review

Abstract

Void and helium bubble stability in amorphous silicon during heavy-ion bombardment was investigated using molecular dynamics simulations. He bubbles with gas pressures equal to or greater than 0.1 kbar were found stable under isotropic 2 keV Xe bombardment at 10 K. The internal He pressure prevented the penetration of liquid Si into the open volume during the displacement cascade. It was found that the elongated morphology was very stable with respect to closure under Xe bombardment.

Original languageEnglish (US)
Pages (from-to)4181-4188
Number of pages8
JournalJournal of Applied Physics
Volume96
Issue number8
DOIs
StatePublished - Oct 15 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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