Molecular beam epitaxy of single crystal colossal magneto-resistive material

J. N. Eckstein; I. Bozovic; M. Rzchowski; J. O'Donnell; B. Hinaus; M. Onellion

Molecular beam epitaxy of single crystal colossal magneto-resistive material

J. N. Eckstein, I. Bozovic, M. Rzchowski, J. O'Donnell, B. Hinaus, M. Onellion

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have grown films of (LaSr)MnO₃ (LSMO) and (LaCa)MnO₃ (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseuodomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T^-1.

Original language	English (US)
Pages (from-to)	467-471
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	401
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Molecular beam epitaxy of single crystal colossal magneto-resistive material",

abstract = "We have grown films of (LaSr)MnO3 (LSMO) and (LaCa)MnO3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseuodomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T-1.",

author = "Eckstein, {J. N.} and I. Bozovic and M. Rzchowski and J. O'Donnell and B. Hinaus and M. Onellion",

year = "1996",

language = "English (US)",

volume = "401",

pages = "467--471",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Symposium ; Conference date: 27-11-1995 Through 30-11-1995",

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TY - JOUR

T1 - Molecular beam epitaxy of single crystal colossal magneto-resistive material

AU - Eckstein, J. N.

AU - Bozovic, I.

AU - Rzchowski, M.

AU - O'Donnell, J.

AU - Hinaus, B.

AU - Onellion, M.

PY - 1996

Y1 - 1996

N2 - We have grown films of (LaSr)MnO3 (LSMO) and (LaCa)MnO3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseuodomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T-1.

AB - We have grown films of (LaSr)MnO3 (LSMO) and (LaCa)MnO3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseuodomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T-1.

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M3 - Conference article

AN - SCOPUS:0029771498

SN - 0272-9172

VL - 401

SP - 467

EP - 471

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Symposium

Y2 - 27 November 1995 through 30 November 1995

ER -

Molecular beam epitaxy of single crystal colossal magneto-resistive material

Abstract

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